IndiumV3, Chine, Analysis, bibRecord, 001871

1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors

Identifieur interne : 001871 ( Chine/Analysis ); précédent : 001870; suivant : 001872

1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors

Auteurs : RBID : Pascal:05-0098773

Descripteurs français

Pascal (Inist)
- Laser cavité verticale, Laser émission surface, Laser semiconducteur, Laser solide, Réflexion Bragg répartie, Indium Gallium Arséniure, Composé ternaire, Indium Gallium Aluminium Arséniure, Composé quaternaire, Indium phosphure, Puits quantique multiple, Laser puits quantique, Procédé dépôt, Méthode MOCVD, Epitaxie jet moléculaire, Etude expérimentale, InGaAs, VCSEL, InP, InGaAlAs, As Ga In, Al As Ga In, In P, 4255P.

English descriptors

KwdEn :
- Deposition process, Distributed Bragg reflection, Experimental study, Indium Gallium Aluminium Arsenides, Indium Gallium Arsenides, Indium phosphides, MOCVD, Molecular beam epitaxy, Multiple quantum well, Quantum well lasers, Quaternary compounds, Semiconductor lasers, Solid state lasers, Surface emitting lasers, Ternary compounds, Vertical cavity laser.

Abstract

High-performance InGaAs/InGaA1As multiple-quantum-well vertical-cavity surface-emitting lasers (VCSELs) with InGaA1As/InP distributed Bragg reflectors are proposed for operation at the wavelength of 1.55 μm. The lasers have good heat diffusion characteristic, large index contrast in DBRs, and weak temperature sensitivity. They could be fabricated either by metal-organic chemical vapor deposition (MOCVD) or by molecular beam epitaxy (MBE) growth. The laser light-current characteristics indicate that a suitable reflectivity of the DBR on the light output side in a laser makes its output power increase greatly and its lasing threshold current reduce significantly, and that a small VCSEL could output the power around its maximum for the output mirror at the reflectivity varying in a broader range than a large VCSEL does.

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Pascal:05-0098773

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors</title>
<author><name>JINAN XIA</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences</s1>
<s2>Shanghai 201800</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 201800</wicri:noRegion>
</affiliation>
</author>
<author><name>BEOM HOAN O</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Micro-Photonics Advanced Research Center, School of Information and Communication Engineering, Inha University</s1>
<s2>Incheon 402-751</s2>
<s3>KOR</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
<wicri:noRegion>Incheon 402-751</wicri:noRegion>
</affiliation>
</author>
<author><name>SEUNG GOL LEE</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Micro-Photonics Advanced Research Center, School of Information and Communication Engineering, Inha University</s1>
<s2>Incheon 402-751</s2>
<s3>KOR</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
<wicri:noRegion>Incheon 402-751</wicri:noRegion>
</affiliation>
</author>
<author><name>EL HANG LEE</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Micro-Photonics Advanced Research Center, School of Information and Communication Engineering, Inha University</s1>
<s2>Incheon 402-751</s2>
<s3>KOR</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
<wicri:noRegion>Incheon 402-751</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">05-0098773</idno>
<date when="2005">2005</date>
<idno type="stanalyst">PASCAL 05-0098773 INIST</idno>
<idno type="RBID">Pascal:05-0098773</idno>
<idno type="wicri:Area/Main/Corpus">00A754</idno>
<idno type="wicri:Area/Main/Repository">00A366</idno>
<idno type="wicri:Area/Chine/Extraction">001871</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0030-3992</idno>
<title level="j" type="abbreviated">Opt. laser technol.</title>
<title level="j" type="main">Optics and laser technology</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Deposition process</term>
<term>Distributed Bragg reflection</term>
<term>Experimental study</term>
<term>Indium Gallium Aluminium Arsenides</term>
<term>Indium Gallium Arsenides</term>
<term>Indium phosphides</term>
<term>MOCVD</term>
<term>Molecular beam epitaxy</term>
<term>Multiple quantum well</term>
<term>Quantum well lasers</term>
<term>Quaternary compounds</term>
<term>Semiconductor lasers</term>
<term>Solid state lasers</term>
<term>Surface emitting lasers</term>
<term>Ternary compounds</term>
<term>Vertical cavity laser</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Laser cavité verticale</term>
<term>Laser émission surface</term>
<term>Laser semiconducteur</term>
<term>Laser solide</term>
<term>Réflexion Bragg répartie</term>
<term>Indium Gallium Arséniure</term>
<term>Composé ternaire</term>
<term>Indium Gallium Aluminium Arséniure</term>
<term>Composé quaternaire</term>
<term>Indium phosphure</term>
<term>Puits quantique multiple</term>
<term>Laser puits quantique</term>
<term>Procédé dépôt</term>
<term>Méthode MOCVD</term>
<term>Epitaxie jet moléculaire</term>
<term>Etude expérimentale</term>
<term>InGaAs</term>
<term>VCSEL</term>
<term>InP</term>
<term>InGaAlAs</term>
<term>As Ga In</term>
<term>Al As Ga In</term>
<term>In P</term>
<term>4255P</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">High-performance InGaAs/InGaA1As multiple-quantum-well vertical-cavity surface-emitting lasers (VCSELs) with InGaA1As/InP distributed Bragg reflectors are proposed for operation at the wavelength of 1.55 μm. The lasers have good heat diffusion characteristic, large index contrast in DBRs, and weak temperature sensitivity. They could be fabricated either by metal-organic chemical vapor deposition (MOCVD) or by molecular beam epitaxy (MBE) growth. The laser light-current characteristics indicate that a suitable reflectivity of the DBR on the light output side in a laser makes its output power increase greatly and its lasing threshold current reduce significantly, and that a small VCSEL could output the power around its maximum for the output mirror at the reflectivity varying in a broader range than a large VCSEL does.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0030-3992</s0>
</fA01>
<fA02 i1="01"><s0>OLTCAS</s0>
</fA02>
<fA03 i2="1"><s0>Opt. laser technol.</s0>
</fA03>
<fA05><s2>37</s2>
</fA05>
<fA06><s2>2</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>JINAN XIA</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>BEOM HOAN O</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>SEUNG GOL LEE</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>EL HANG LEE</s1>
</fA11>
<fA14 i1="01"><s1>Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences</s1>
<s2>Shanghai 201800</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Micro-Photonics Advanced Research Center, School of Information and Communication Engineering, Inha University</s1>
<s2>Incheon 402-751</s2>
<s3>KOR</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA20><s1>125-130</s1>
</fA20>
<fA21><s1>2005</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>14245</s2>
<s5>354000126492900050</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2005 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>12 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>05-0098773</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Optics and laser technology</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>High-performance InGaAs/InGaA1As multiple-quantum-well vertical-cavity surface-emitting lasers (VCSELs) with InGaA1As/InP distributed Bragg reflectors are proposed for operation at the wavelength of 1.55 μm. The lasers have good heat diffusion characteristic, large index contrast in DBRs, and weak temperature sensitivity. They could be fabricated either by metal-organic chemical vapor deposition (MOCVD) or by molecular beam epitaxy (MBE) growth. The laser light-current characteristics indicate that a suitable reflectivity of the DBR on the light output side in a laser makes its output power increase greatly and its lasing threshold current reduce significantly, and that a small VCSEL could output the power around its maximum for the output mirror at the reflectivity varying in a broader range than a large VCSEL does.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B40B55P</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Laser cavité verticale</s0>
<s5>50</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Vertical cavity laser</s0>
<s5>50</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Laser cavidad vertical</s0>
<s5>50</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Laser émission surface</s0>
<s5>51</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Surface emitting lasers</s0>
<s5>51</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Laser semiconducteur</s0>
<s5>52</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Semiconductor lasers</s0>
<s5>52</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Laser solide</s0>
<s5>53</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Solid state lasers</s0>
<s5>53</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Réflexion Bragg répartie</s0>
<s5>54</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Distributed Bragg reflection</s0>
<s5>54</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Reflexión Bragg repartida</s0>
<s5>54</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Indium Gallium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>55</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Indium Gallium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>55</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>56</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>56</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Indium Gallium Aluminium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>57</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Indium Gallium Aluminium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>57</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Composé quaternaire</s0>
<s5>58</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Quaternary compounds</s0>
<s5>58</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Indium phosphure</s0>
<s2>NK</s2>
<s5>59</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Indium phosphides</s0>
<s2>NK</s2>
<s5>59</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Puits quantique multiple</s0>
<s5>60</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Multiple quantum well</s0>
<s5>60</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Pozo cuántico múltiple</s0>
<s5>60</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Laser puits quantique</s0>
<s5>61</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Quantum well lasers</s0>
<s5>61</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Procédé dépôt</s0>
<s5>62</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Deposition process</s0>
<s5>62</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Procedimiento revestimiento</s0>
<s5>62</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Méthode MOCVD</s0>
<s5>63</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>MOCVD</s0>
<s5>63</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0>
<s5>64</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0>
<s5>64</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>65</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>65</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>VCSEL</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>InGaAlAs</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>79</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Al As Ga In</s0>
<s4>INC</s4>
<s5>80</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>In P</s0>
<s4>INC</s4>
<s5>81</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>4255P</s0>
<s4>INC</s4>
<s5>91</s5>
</fC03>
<fN21><s1>066</s1>
</fN21>
<fN44 i1="01"><s1>PSI</s1>
</fN44>
<fN82><s1>PSI</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors

1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri